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首页> 外文期刊>Journal of Crystal Growth >CdTe crystal growth process by the Bridgman method: numerical simulation
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CdTe crystal growth process by the Bridgman method: numerical simulation

机译：布里奇曼法生长CdTe晶体的过程：数值模拟

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摘要

Numerical simulation of the CdTe crystal growth process by the Bridgman method is made by using the commercial computational code FLUENT for the mathematical solution of the governing equations. To reduce computational effort, we have made use of a two level strategy. In the first level we have considered the whole system formed by the ampoule with the liquid-solid charge, the furnace, and the air between them. The heat transfer is assumed to occur by conduction, convection and radiation between the furnace and the ampoule, and only by conduction through the ampoule wall and the solid and liquid CdTe. In the second level we focus on the ampoule and its content, using the values of the temperature field that were calculated in the first level as thermal boundary conditions at the ampoule wall. Heat transfer through CdTe is described at this level by conduction and convection.
机译：使用商业计算代码FLUENT对控制方程进行数学求解，利用Bridgman方法对CdTe晶体生长过程进行了数值模拟。为了减少计算量，我们采用了两级策略。在第一级中，我们考虑了安瓿与液固装料，熔炉以及它们之间的空气形成的整个系统。假定传热是通过炉子与安瓿之间的传导，对流和辐射发生的，并且仅是通过安瓿壁以及固态和液态CdTe的传导发生的。在第二级中，我们将第一级中计算出的温度场的值用作安瓿壁的热边界条件，重点关注安瓿及其含量。通过CdTe的传热在此水平上通过传导和对流来描述。

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