Growth of high-quality InSb films on Si(111) substrates without buffer layers

B.V.Rao; D.Gruznev; T.Tambo

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Growth of high-quality InSb films on Si(111) substrates without buffer layers

机译：在没有缓冲层的Si（111）衬底上生长高质量InSb膜

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Molecular beam epitaxial growth of InSb on Si(111)7×7 surface is performed in the temperature range, 170-400deg.C. Epitaxial growth is achieved by suitably adjusting the growth rate, In/Sb flux ratio and substrate temperature. For Growth temperatures up to 300deg.C surface morphology and the epitaxial quality of the film improve with temperature, Whereas above 300deg.C, an increase in growth temperature deteriorates the epitaxial growth.

机译：InSb在Si（111）7×7表面上的分子束外延生长是在170-400℃的温度范围内进行的。外延生长是通过适当地调节生长速率，In / Sb通量比和衬底温度来实现的。对于高达300℃的生长温度，表面形貌和膜的外延质量随温度而改善，而在300℃以上，生长温度的升高使外延生长恶化。

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来源
《Journal of Crystal Growth》 |2001年第4期|p.316-322|共7页
作者
B.V.Rao; D.Gruznev; T.Tambo;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Crystal structure; A1.Heteroepitaxy; A1.Reflection high energy electron diffraction;

机译：A1。晶体结构;A1。异质外延;A1。反射高能电子衍射;

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Growth of high-quality InSb films on Si(111) substrates without buffer layers

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