Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions

Michael G.Mauk; James P.Curran

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Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions

机译：液态金属溶液中硅的电外延横向生长

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摘要

Monocrystalline silicon films are formed on patterned, metal-masked silicon substrates by a liquid-phase electro- epitaxial lateral overgrowth process. More specifically, silicon films are grown from liquid-metal solutions (molten bismuth saturated with silicon) by current-induced crystallization on stripe-patterned, tungsten-masked (111) silicon substrates.

机译：通过液相电外延横向过生长工艺在图案化的，金属掩膜的硅基板上形成单晶硅膜。更具体地说，通过在条纹图案化的钨掩膜的（111）硅基板上通过电流诱导的结晶作用，从液态金属溶液（硅饱和的熔融铋）中生长硅膜。

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来源
《Journal of Crystal Growth》 |2001年第4期|p.348-353|共6页
作者
Michael G.Mauk; James P.Curran;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3.Liquid phase epitaxy; A3.Selective epitaxy; B2.Semi-conducting silicon;

机译：A3。液相外延;A3。选择性外延;B2。半导体硅;

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3. Investigating Voltage as a Function of the Reduced Junction Area for Thin Silicon Solar Cells That Utilize Epitaxial Lateral Overgrowth [J] . Hao R., Murcia C. C., Leitz C., Photovoltaics, IEEE Journal of . 2013,第1期

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Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions

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