MBE growth of mid-infrared antimonide LEDs with strained electron barriers

X.Li; J.Heber; M.Pullin

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MBE growth of mid-infrared antimonide LEDs with strained electron barriers

机译：具有应变电子势垒的中红外锑LED的MBE生长

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InAs/InAs_xSb_1-x single quantum well (SQW) p-I-n structures have been grown on p~+-InAs(001) substrates by molecular-beam epitaxy. Significant improvements in SQW light emitting diode performance have been realized by the incorporation of strained electron barrier layers. Room temperature performance has increased by factor of up to 7. Additional 4 K magneto-electro-luminescence measurements demonstrate the good materials quality.

机译：InAs / InAs_xSb_1-x单量子阱（SQW）p-I-n结构通过分子束外延生长在p〜+ -InAs（001）衬底上。通过引入应变电子势垒层，已经实现了SQW发光二极管性能的显着改善。室温性能提高了多达7倍。另外的4 K磁电致发光测量证明了良好的材料质量。

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来源
《Journal of Crystal Growth》 |2001年第2001期|p.600-604|共5页
作者
X.Li; J.Heber; M.Pullin;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Low dimensional structures; A3.Molecular beam epitaxy; B1.Antimonides;

机译：A1。低维结构;A3。分子束外延;B1。锑;

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1. Swift heavy silver (Ag~(+7)) ion irradiation induced self assembled nanodots on MBE grown Gallium antimonide (GaSb) [J] . Kumar Satish, Mahapatro Ajit K., Mishra Puspashree Applied Surface Science . 2018,第DECa31期

机译：快速重银（Ag〜（+7））离子辐照在MBE生长的锑化镓（GaSb）上诱导自组装纳米点
2. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs [J] . Keen J. A., Lane D., Kesaria M., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2018,第7期

机译：用于中红外LED的INAS / INASSB Type-II紧张层超晶格
3. Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers [J] . R.T. MOUG, H. SULTANA, Y. YAO, Journal of Electronic Materials . 2012,第5期

机译：优化分子束外延（MBE）生长以开发中红外（IR）II-VI量子级联激光器
4. MBE growth of mid-infrared antimonide LEDs with strained electron barriers [C] . J. Hebe, C.C. Phillips, D. Gevaux, International conference on molecular beam epitaxy . 2001

机译：MBE中红外锑苷LED的生长具有紧张的电子屏障
5. Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells. [D] . Vaughn, Leslie G. 2006

机译：中红外多量子阱激光器，使用数字生长的铝铟砷锑化物势垒和应变铟砷锑化物阱。
6. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs [O] . Yuri G. Sadofyev, Nigamananda Samal 2010

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7. MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED [O] . D. Broxtermann, M. Sivis, J. Malindretos, 2012

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8. Growth and Characterization of MBE Parametric Variations Upon Polarization Independent Strained Films [R] . 2003

机译：极化独立应变薄膜mBE参数变化的生长与表征

MBE growth of mid-infrared antimonide LEDs with strained electron barriers

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