Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AIN systems

J.R.L.Fernandez; C.Moyses Araujo; A.Ferreira da Silva

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Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AIN systems

机译：立方GaN，InN和AIN系统中Si掺杂GaN的电阻率和带隙位移以及金属-非金属跃迁

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摘要

The critical impurity concentration N_c of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AIN systems, is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energies in the metallic and insulating phases.

机译：使用以下两个不同的标准计算立方氮化镓，InN和AIN系统的金属-非金属（MNM）跃迁的临界杂质浓度N_c：施主结合能的消失以及金属和金属中能量的交叉点绝缘相。

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来源
《Journal of Crystal Growth》 |2001年第3期|p.420-427|共8页
作者
J.R.L.Fernandez; C.Moyses Araujo; A.Ferreira da Silva;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Characterization; a1.Doping; A3.Molecular beam epitaxy;

机译：A1。特性化;a1。掺杂;A3。分子束外延;

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专利

1. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si [J] . C. Moyses Araujo, J.R.L. Fernandez, A. Ferreira da Silva Microelectronics journal . 2002,第4期

机译：立方GaN：Si的电阻率，MNM跃迁和带隙变窄
2. Tight-binding branch-point energies and band offsets for cubic InN, GaN, AIN, and AlGaN alloys [J] . Daniel Mourad Journal of Applied Physics . 2013,第12期

机译：立方InN，GaN，AlN和AlGaN合金的紧束缚分支点能和能带偏移
3. Valence-band splittings in cubic and hexagonal AIN, GaN, and InN [J] . Luiz Claudio de Carvalho, Andre Schleife, Frank Fuchs, Applied Physics Letters . 2010,第23期

机译：立方和六方AIN，GaN和InN中的价带分裂
4. Growth of nonpolar cubic GaN/AIN multiple quantum wells with intersubband transitions for 1.5 μm applications [C] . D. J. As, J. Schormann, E. Tschumak, International Conference of Nitride Semiconductors . 2008

机译：非极性立方GaN / AIN多量子阱的生长具有三通带转换的1.5μm应用
5. Study of GaN:Eu & delta-InN Based Active Regions for High Efficiency Long Wavelength Emitters [D] . Fragkos, Ioannis Emmanouil. 2019

机译：GaN的研究：欧盟＆Delta-Inn基于高效长波长发射器的有源区
6. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
7. The effect of GaN thickness inserted between two AIN layers on the transport properties of a lattice matched AllnN/AIN/GaN/AIN/GaN double channel heterostructure [O] . Tulek, R., Arslan, E., Bayrakli, A., 2014

机译：插入在两个AIN层之间的GaN厚度对晶格匹配的AllnN / AIN / GaN / AIN / GaN双通道异质结构的输运性能的影响

Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AIN systems

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