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首页> 外文期刊>Journal of Crystal Growth >Gallium nitride thin layers via a liquid precursor route
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Gallium nitride thin layers via a liquid precursor route

机译：液态前驱物路线氮化镓薄层

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A chemical solution deposition method was used to grow thin epitaxial GaN films on C- and R-plane sapphire substrates. The films were grown by spin-coating a gallium carbodiimide based polymeric precursor onto sapphire and pyrolyzing in NH_3 at 900℃. During heat treatment α-GaN formed on the R-plane of the sapphire with the following epitaxial orientation relationship: α-Al_2O_3(0112)‖α-GaN(1120); α-Al_2O_3 [2110] ‖α-GaN[1100]. A multiple coating process resulted in films fully covering the R-plane substrates. Films deposited on C-plane sapphire were not continuous and single islands were present on the substrate surface. The morphology and microstructure of the films were characterised by SEM, XRD, and conventional and analytical electron microscopy.
机译：化学溶液沉积方法用于在C和R面蓝宝石衬底上生长外延GaN薄膜。通过将碳二亚胺镓基聚合物前体旋涂到蓝宝石上并在NH_3中于900℃热解，来生长薄膜。在热处理期间，在蓝宝石的R面上形成的α-GaN具有以下外延取向关系：α-Al_2O_3（0112）′α-GaN（1120）； α-Al_2O_3[2110]‖α-GaN[1100]。多次涂覆过程导致薄膜完全覆盖R平面基材。沉积在C面蓝宝石上的薄膜不连续，并且衬底表面上存在单个岛。用SEM，XRD，常规和分析型电子显微镜对薄膜的形貌和微观结构进行了表征。

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