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首页> 外文期刊>Journal of Crystal Growth >Formation and dissolution of InAs quantum dots on GaAs
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Formation and dissolution of InAs quantum dots on GaAs

机译：GaAs上InAs量子点的形成与溶解

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In situ reflection high energy electron diffraction (RHEED) has been used to study the time evolution during self-assembled molecular beam epitaxy (MBE) growth of InAs quantum dots on GaAs. Using a special data acquisition technique, two characteristic time constants are determined very precisely: the time t_c up to the first appearance of InAs dots and the time t_f it takes to complete the 2D-3D transition of all islands. Surprisingly, we find that t_c increases with temperature which disagrees with a thermally activated process. In contrast to this, t_f behaves Arrhenius-like and an activation energy of E_f approx= 0.39 eV is determined. Furthermore, the sum t_c + t_f does not depend significantly on temperature and corresponds to an InAs coverage of approx= 2.0 monolayers. A second focus of this paper is the study of dissolution of InAs dots after interruption of the As flux. From the experiments, an activation energy of 3.2 eV for desorption of In located on top of the wetting layer is determined, whereas direct desorption from the wetting layer corresponds to an activation energy of 3.4 eV.
机译：原位反射高能电子衍射（RHEED）已用于研究GaAs上InAs量子点自组装分子束外延（MBE）生长期间的时间演化。使用特殊的数据采集技术，可以非常精确地确定两个特征时间常数：直到InAs点首次出现的时间t_c和完成所有岛的2D-3D过渡所花费的时间t_f。令人惊讶地，我们发现t_c随温度而增加，这与热激活过程不同。与此相反，t_f表现出类似阿伦尼乌斯（Arrhenius）的状态，并确定E_f的激活能约为0.39 eV。此外，总和t_c + t_f并不显着取决于温度，并且对应于大约= 2.0单层的InAs覆盖率。本文的第二个重点是研究As通量中断后InAs点的溶解。根据实验，确定了位于湿润层顶部的In解吸的活化能为3.2 eV，而直接从湿润层解吸的活化能为3.4 eV。

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