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首页> 外文期刊>Journal of Crystal Growth >Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
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Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

机译：PVT生长SiC块状晶体传热传质的全局数值模拟。

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摘要

A modeling approach for the numerical simulation of heat and mass transfer during SiC sublimation growth in inductively heated physical vapor transport (PVT) reactors is introduced. The physical model is based on the two-dimensional solution of the coupled differential equations describing mass conservation, momentum conservation, conjugate heat transfer including surface to surface radiation, multicomponent chemical species mass transfer and advective flow. The model also includes the Joule volume heat sources induced by the electromagnetic field. The evolution of the temperature profiles inside the crucible and of the crystallization front is studied. The radial temperature gradient at the crystal/gas interface causes strong radial non-uniformity of the growth rate and, in turn, influences the shape of the growing crystal. Results of calculations are compared to experimental observations to analyse the validity of the modeling approach. Both the computed growth rates, their temporal evolution and the shape of the growing crystal agree with experimental data.
机译：介绍了一种在感应加热的物理气相传输（PVT）反应器中SiC升华生长过程中传热和传质的数值模拟的建模方法。物理模型基于耦合的微分方程的二维解，描述了质量守恒，动量守恒，包括表面到表面辐射在内的共轭热传递，多组分化学物质质量传递和对流。该模型还包括由电磁场引起的焦耳体积热源。研究了坩埚内部温度曲线和结晶前沿的演变。晶体/气体界面处的径向温度梯度会导致生长速率的径向严重不均匀，进而影响生长晶体的形状。将计算结果与实验观察结果进行比较，以分析建模方法的有效性。计算出的生长速率，它们的时间演化和生长的晶体的形状均与实验数据一致。

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