Epitaxial CaGe_2 films on germanium

G. Vogg; M.S. Brandt; M. Stutzmann; I. Genchev; A. Bergmaier; L. Goergens; G. Dollinger

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Epitaxial CaGe_2 films on germanium

机译：锗上的外延CaGe_2薄膜

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The epitaxial growth of thin CaGe_2 films with reactive deposition epitaxy (RDE) on Ge(111) substrates is described. The films consist in general of a mixture of the known trigonal rhombohedral tr6 modification and a hexagonal h2 modification of CaGe_2 containing two Ca and two buckled Ge layers per unit cell in a twofold stacking sequence whose formation appears to be favored by strain. Epitaxial layers of both polytypes show remarkably higher crystalline quality compared to epitaxial CaSi_2 films grown on silicon substrates. The tr6 modification is found to be unstable in air in contrast to the h2 modification.

机译：描述了在Ge（111）衬底上外延生长具有反应性沉积外延（RDE）的CaGe_2薄膜的过程。膜通常由已知的三角形菱面体tr6修饰和六面体h2修饰的CaGe_2的混合物组成，CaGe_2每单位晶胞按两倍堆叠顺序包含两个Ca和两个弯曲的Ge层，其形成似乎受应变的影响。与在硅衬底上生长的外延CaSi_2膜相比，两种多型的外延层均显示出明显更高的结晶质量。与h2修饰相反，发现tr6修饰在空气中不稳定。

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来源
《Journal of Crystal Growth》 |2000年第2期|p.148-154|共7页
作者
G. Vogg; M.S. Brandt; M. Stutzmann; I. Genchev; A. Bergmaier; L. Goergens; G. Dollinger;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
calcium digermanide; CaGe_2; reactive deposition epitaxy;

机译：二锗酸钙;CaGe_2;反应沉积外延;

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Epitaxial CaGe_2 films on germanium

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