Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots

H.L. Wang; F.H. Yang; S.L. Feng

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Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots

机译：Si和Be直接掺杂的自组织InAs / GaAs量子点中的光致发光

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摘要

We report on the photoluminescence in directly Si- and Be-doped self-organized InAs/GaAs quantum dots (QDs). When the doping level is low, a decrease in linewidth is observed. However, it will decrease the uniformity and photoluminescence peak intensity of QDs when the doping level is high. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs.

机译：我们报告直接在Si和Be掺杂的自组织InAs / GaAs量子点（QDs）中的光致发光。当掺杂水平低时，观察到线宽减小。但是，当掺杂水平高时，会降低量子点的均匀性和光致发光峰强度。我们将此现象与一个以Si或Be原子为形成QD的成核中心的模型相关联。

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来源
《Journal of Crystal Growth》 |2000年第2期|p.35-38|共4页
作者
H.L. Wang; F.H. Yang; S.L. Feng;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
dopant; InAs/GaAs; self-organized quantum dots; MBE; PL;

机译：掺杂剂;InAs / GaAs;自组织量子点;MBE;PL;

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专利

1. PHOTOLUMINESCENCE STUDY OF InAs/GaAs SELF-ORGANIZED QUANTUM DOTS WITH BIMODAL SIZE DISTRIBUTION [J] . GUO ZHONG-SHENG, WANG HAI-LONG, NING DONG Chinese physics . 2000,第5期

机译：具有双峰尺寸分布的InAs / GaAs自组装量子点的光致发光研究
2. PHOTOLUMINESCENCE STUDY OF InAs/GaAs SELF-ORGANIZED QUANTUM DOTS WITH BIMODAL SIZE DISTRIBUTION [J] . GUO ZHONG-SHENG, WANG HAI-LONG, NING DONG, 中国物理：英文版 . 2000,第005期

机译：具有双峰尺寸分布的InAs / GaAs自组装量子点的光致发光研究
3. Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure [J] . P. Y. Zhou, X. M. Dou, X. F. Wu, Journal of Applied Physics . 2014,第2期

机译：自组织1.55μmInAs / InGaAsP / InP量子点在静水压下的光致发光研究
4. Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy [C] . 2008 IEEE纳米电子学国际会议暨上海纳光电论坛(2nd IEEE International Nanoelectronics Conference Shanghai Nanophotonics and Electronics Forum)论文集 . 2008

机译：原子力显微镜和光致发光光谱在应变诱导和温度控制成核机制下表征自组织InAs / GaAs量子点
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices [O] . Luca Sapienza, Jin Liu, Jin Dong Song, -1

机译：结合原子力显微镜和光致发光成像为量子光子器件选择单个InAs / GaAs量子点
7. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots [O] . Buckle Philip Derek, Dawson P., Hall S. A., 1999

机译：自组织InAs / GaAs量子点的光致发光衰减时间测量
8. Photoluminescence Decay Time Measurements from Self-Organized InAs/GaAs Quantum Dots Grown on Misoriented Substrates. [R] . Shkolnik, A. S., Dogonkin, E. B., Evtikhiev, V. P., 2001

机译：在错误定向衬底上生长的自组织Inas / Gaas量子点的光致发光衰减时间测量。

Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots

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