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首页> 外文期刊>Journal of Crystal Growth >Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO_2 films
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Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO_2 films

机译：退火的富Si SiO_2薄膜中纳米Si团簇的沉淀和结晶

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摘要

Si-rich SiO_2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si-SiO_2 composite targets. X-ray photoelectron spectroscopy measurements indicate that Si clusters were present in the as-deposited films. The precipitation and crystallization of nanometer Si clusters in SiO_2 films annealed at high temperatures have been studied using high-resolution transmission electron microscopy and electron diffraction. Si nanocrystallites were observed in the sample deposited using a Si-SiO_2 composite target having a 30% area of Si and which had been annealed at 900℃. The average size and density of Si nanocrystallites in the films increased notably as the annealing temperature was increased from 900 to 1100℃. Thus, using a 1100℃ anneal and increasing the area percentage of Si in the composite target from 20 to 30%, the average size of Si nanocrystallites increased about 15%, and the density of Si nanocrystallites increased by a factor of about 2.5.
机译：使用Si-SiO_2复合靶材，通过RF磁控溅射沉积了具有三种不同Si富集度的Si富集SiO_2薄膜。 X射线光电子能谱测量表明在沉积的膜中存在Si簇。利用高分辨率透射电子显微镜和电子衍射技术研究了纳米Si团簇在高温退火的SiO_2薄膜中的析出和结晶。在使用Si-SiO_2复合靶材沉积的样品中观察到Si纳米晶体，该靶材的Si面积为30％，并在900℃下退火。随着退火温度从900℃提高到1100℃，薄膜中Si纳米微晶的平均尺寸和密度显着增加。因此，使用1100℃退火并将复合靶材中的Si面积百分比从20％增加到30％，Si纳米晶体的平均尺寸增加了约15％，Si纳米晶体的密度增加了约2.5倍。

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