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首页> 外文期刊>Journal of Crystal Growth >Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition
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Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition

机译：抑制金属有机化学气相沉积生长的As掺杂GaN外延层中的黄色发光

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摘要

The excitonic emissions near band edge, the donor-to-acceptor pair (DAP) emissions and the yellow luminescence (YL) in undoped GaN and As-doped GaN at a low doping level have been investigated. At 4.2 K, the intensity of the DAP emissions around 3.28 eV were observed to increase when the As concentration is increased. This enhancement has been correlated with an increase of the As-related isoelectronic centers. On the other hand, a remarkable reduction of the yellow luminescence due to the incorporation of As into GaN is found at 4.2 K, and it persists up to room temperature where the DAP signal has got quenched due to thermal ionization. These results suggest that the suppression of the YL is due to the passivation of the YL deep centers by the As-incorpo ration.
机译：研究了低掺杂水平下未掺杂的GaN和As掺杂的GaN中的能带边缘附近的激子发射，施主-受主对（DAP）发射和黄色发光（YL）。在4.2 K下，当As浓度增加时，观察到DAP发射强度在3.28 eV附近增加。这种增强与砷相关的等电子中心的增加有关。另一方面，由于在4.2 K处由于将As掺入GaN中而导致的黄色发光显着减少，并且这种现象一直持续到室温，其中DAP信号由于热电离而被淬灭。这些结果表明，对YL的抑制是由于As结合对YL深中心的钝化。

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