Growth of In_xGa_(1-x)As layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy

S. Iida; K. Balakrishnan; T. Koyama; Y. Hayakawa; M. Kumagawa

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Growth of In_xGa_(1-x)As layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy

机译：液相外延法在（100）GaAs图案化衬底上生长具有金字塔形In_xGa_（1-x）As层

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摘要

Liquid-phase epitaxial growth of In_xGa_(1-x)As (x = 0.6) layers on various types of patterned (100)GaAs substrates was investigated. Non-planar InGaAs layer having filled tent-like structure was grown on non-patterned substrate. When the InGaAs was grown on circular-patterned substrate, a non-hollow pyramid structure was obtained. Perfect hollow pyramid structured InGaAs was found to be grown on trench substrates of (100)GaAs.

机译：研究了In_xGa_（1-x）As（x = 0.6）层在各种类型的图案化（100）GaAs衬底上的液相外延生长。在非图案化的衬底上生长具有填充的帐篷状结构的非平面InGaAs层。当InGaAs生长在圆形图案的衬底上时，获得了非空心的金字塔结构。发现完美的空心金字塔结构的InGaAs生长在（100）GaAs的沟槽衬底上。

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来源
《Journal of Crystal Growth》 |2000年第4期|p.601-604|共4页
作者
S. Iida; K. Balakrishnan; T. Koyama; Y. Hayakawa; M. Kumagawa;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
InGaAs bridge layer; pyramid structure; (100)GaAs substrate; liquid-phase epitaxy;

机译：InGaAs桥层;金字塔结构;（100）GaAs衬底;液相外延;

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专利

1. Growth of In_xGa_(1-x)As layers with pyramidal morphology on (1 0 0)GaAs patterned substrates by liquid-phase epitaxy [J] . S. Iida, K. Balakrishnan, T. Koyama Journal of Crystal Growth . 2000,第3a4期

机译：液相外延法在（1 0 0）GaAs图案化衬底上生长具有金字塔形In_xGa_（1-x）As层
2. Formation mechanism of In_xGa_(1-x)As bridge layers on patterned GaAs substrates [J] . S. Iida, Y. Hayakawa, T. Koyama, Journal of Crystal Growth . 2000,第4期

机译：图案化GaAs衬底上In_xGa_（1-x）As桥层的形成机理
3. Formation mechanism of In_xGa_(1-x)As bridge layers on patterned GaAs substrates [J] . S. Iida, Y. Hayakawa, T. Koyama Journal of Crystal Growth . 2000,第4期

机译：图案化GaAs衬底上In_xGa_（1-x）As桥层的形成机理
4. Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on Al_xGa_(1-x)As and In_xGa_(1-x)As buffer layers on GaAs substrates [C] . H. Yonezu, K. Momose, M. Melendez-Lira, International conference on molecular beam epitaxy . 2001

机译：在AL_XGA_（1-X）和IN_XGA_（1-x）上的分子束外延生长的ZnSe膜中的晶体质量和Ga偏析作为GaAs基板上的缓冲层
5. Artificial Graphene in Nano-patterned GaAs Quantum Wells and Graphene Growth by Molecular Beam Epitaxy. [D] . Wang, Sheng. 2016

机译：纳米图形GaAs量子阱中的人造石墨烯和分子束外延生长石墨烯。
6. Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy [O] . Ming-Yu Li, Yusuke Hirono, Sabina D Koukourinkova, 2012

机译：通过分子束外延在图案化的GaAs（100）上形成Ga液滴
7. Defect Filtration of Hollow Pyramidal Structured GaSb Epilayers Grown on GaSb (100) Patterned Substrates by Liquid Phase Epitaxy [O] . Hayakawa, Yasuhiro, Kumagawa, Masashi, Zhang, Cuoqiang, 2003

机译：GaSb（100）图案化衬底上生长的空心金字塔形GaSb外延层的液相外延缺陷过滤
8. Growth Characteristics of GaAs-Ga(1-x)Al(x)As Structures Fabricated by Liquid-Phase Epitaxy Over Preferentially Etched Channels. [R] . Botex, D., Tsang, W. T., Wang, S. 1975

机译：在优先蚀刻通道上液相外延制备Gaas-Ga（1-x）al（x）as结构的生长特性。

Growth of In_xGa_(1-x)As layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy

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