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首页> 外文期刊>Journal of Crystal Growth >2D-nucleation on (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication
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2D-nucleation on (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication

机译：用GaAs MBE中的microprobe-RHEED研究了（111）B微面上的二维成核，以制造台面结构

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摘要

2D-nucleation on GaAs (111)B micro-facet was studied by using microprobe-RHEED/ SEM MBE. The RHEED intensity oscillation on the (111)B facet was observed only when incident Ga flux was relatively large, and the oscillation disappeared by reducing Ga flux. It is indicated that, 2D-nucleation on (111)B surface occurs only when incident Ga flux is large enough so that surface Ga adatoms accumulate sufficiently to start 2D-nucleation, otherwise all of the Ga adatoms flow away by inter-surface diffusion to (001) where they are incorporated into the crystal. By using simple rate equations, we show that it is possible to estimate the critical value of Ga adatom concentration for nucleation and Ga incorporation lifetime on GaAs (111)B surface.
机译：通过使用微型探针-RHEED / SEM MBE研究了GaAs（111）B微面上的二维成核。仅当入射的Ga磁通相对较大时，才观察到（111）B面上的RHEED强度振荡，并且通过减少Ga磁通消失了振荡。结果表明，只有当入射Ga的通量足够大，使得表面Ga原子积累到足以开始2D成核时，（111）B表面才会发生2D形核，否则所有Ga原子通过表面间扩散而流失。 （001）将它们合并到晶体中。通过使用简单的速率方程，我们表明可以估计Ga原子浓度对GaAs（111）B表面成核和Ga掺入寿命的临界值。

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