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首页> 外文期刊>Journal of Crystal Growth >Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate
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Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate

机译：周期性Siδ掺杂对在Si（111）衬底上生长的n-GaN特性的影响

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摘要

We investigated the influences of periodic Si δ-doping on the characteristics of n-GaN grown on Si (111) substrate by metal organic chemical vapor deposition (MOCVD). By using periodic δ-doping, the tensile stress in GaN film induced by Si-doping was reduced to 0.057 GPa/10~(18) cm~(-3) electrons, which was 56% smaller than that in uniformly doped GaN. Moreover, superior electrical properties were achieved in periodic δ-doped GaN films without cracks by varying the Si doping level. X-ray diffraction measurements show similar 002 and 102 full widths at half maximum (FWHMs) for periodic δ-doped GaN and uniformly doped GaN with the same Si doping amount, implying equivalent crystalline qualities of GaN:Si through the two doping methods. A narrower FWHM of the near band edge emission of GaN was obtained in the photoluminescence spectrum with periodic δ-doping, indicating enhanced optical properties.
机译：我们研究了周期性的Siδ掺杂对通过金属有机化学气相沉积（MOCVD）在Si（111）衬底上生长的n-GaN特性的影响。通过周期性的δ掺杂，Si掺杂引起的GaN薄膜的拉应力减小到0.057 GPa / 10〜（18）cm〜（-3）电子，比均匀掺杂的GaN小56％。此外，通过改变Si的掺杂水平，在周期性的δ掺杂的GaN薄膜中实现了优异的电性能而无裂纹。 X射线衍射测量显示，周期性δ掺杂的GaN和均匀掺杂的GaN的002和102的半高全宽（FWHMs）具有相同的Si掺杂量，这意味着通过两种掺杂方法的GaN：Si具有相同的晶体质量。在具有周期性δ-掺杂的光致发光光谱中，获得了GaN的近带边缘发射的更窄的FWHM，表明增强的光学性质。

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  • 来源
    《Journal of Crystal Growth》 |2014年第1期|106-110|共5页
  • 作者

    Peng Xiang; Yibin Yang; Minggang Liu; Weijie Chen; Xiaobiao Han; Yan Lin; Gangwei Hu; Guoheng Hu; Hui Luo; Jianliang Jiang; Jiali Lin; Zhisheng Wu; Yang Liu; Baijun Zhang;

  • 作者单位

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

    School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Characterization; A1. Doping; A1. Stresses; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;

    机译：A1。表征;A1。掺杂A1。压力;A3。金属有机化学气相沉积;B1。氮化物;B2。半导体Ⅲ-Ⅴ材料;

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