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首页> 外文期刊>Journal of Crystal Growth >Growth and physical characterization of AgGa_(1-x)In_xSe_2 (x=0.5) single crystals grown by modified vertical Bridgman method
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Growth and physical characterization of AgGa_(1-x)In_xSe_2 (x=0.5) single crystals grown by modified vertical Bridgman method

机译：改进的垂直布里奇曼法生长的AgGa_（1-x）In_xSe_2（x = 0.5）单晶的生长和物理表征

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摘要

AgGa_(1-x)In_xSe_2 (x=0.5) polycrystalline material was successfully synthesised from high purity elements by the melt and temperature oscillation method. Large size and crack-free AgGa_(0.5)In_(0.5)Se_2 single crystals were grown using a double wall quartz ampoule with accelerated crucible rotation technique (ACRT) by modified vertical Bridgman method. The unit cell parameters were confirmed by single crystal X-ray diffraction analysis. The composition of AgGa_(0.5)In_(0.5)Se_2 was measured using energy dispersive spectro-metry (EDS). The insignificant change in atomic percentages of Ag, Ga, In and Se along the ingot further reveals that the composition throughout its length is fairly homogeneous. The transmittance spectra of AgGa_(0.5)In_(0.5)Se_2 single crystal was achieved in the NIR region and high transmittance of the crystals in the mid-IR region was revealed. The absorption edge of the material is near 881 nm and the optical band gap energy is 1.4 eV. Thermal property of AgGa_(0.5)In_(0.5)Se_2 has been studied using Differential scanning calorimetry (DSC) technique and it confirms that the increase in Indium content reduces the supercooling temperature. Electrical property is measured using Hall Effect measurements and it confirms the n-type semiconducting nature.
机译：通过熔融和温度振荡法成功地由高纯度元素合成了AgGa_（1-x）In_xSe_2（x = 0.5）多晶材料。使用改进的垂直布里奇曼方法，采用加速坩埚旋转技术（ACRT）的双壁石英安瓿瓶，生长出大尺寸且无裂纹的AgGa_（0.5）In_（0.5）Se_2单晶。通过单晶X射线衍射分析确认了晶胞参数。使用能量分散光谱法（EDS）测量AgGa_（0.5）In_（0.5）Se_2的组成。沿铸锭的Ag，Ga，In和Se原子百分比的微小变化进一步揭示了整个长度范围内的成分均一。在近红外区获得了AgGa_（0.5）In_（0.5）Se_2单晶的透射光谱，并揭示了中红外区晶体的高透射率。该材料的吸收边缘接近881 nm，光学带隙能量为1.4 eV。利用差示扫描量热法（DSC）研究了AgGa_（0.5）In_（0.5）Se_2的热性能，证实了铟含量的增加降低了过冷温度。使用霍尔效应测量来测量电性能，并证实了n型半导体性质。

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