Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy

S. Albert; A. Bengoechea-Encabo; M. Sabido-Siller; M. Mueller; G. Schmidt; S. Metzner; P. Veit; F. Bertram; M.A. Sanchez-Garcia; J. Christen; E. Calleja

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Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy

机译：通过分子束外延在选择性刻蚀的GaN棒上生长InGaN / GaN核-壳结构

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This work reports on the growth and characterization of InGaN/GaN core-shell structures by plasma-assisted molecular beam epitaxy on an ordered array of top-down patterned GaN microrods fabricated on a GaN/sapphire substrate. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) was confirmed by spatially resolved cathodoluminescence performed using scanning electron microscopy as well as scanning transmission electron microscopy. The In content of the InGaN shell is controlled by means of the growth temperature and the Ⅲ/Ⅴ ratio.

机译：这项工作报道了在GaN /蓝宝石衬底上制造的由上而下的图案化GaN微棒的有序阵列上通过等离子辅助分子束外延生长和表征InGaN / GaN核-壳结构的特性。 InGaN / GaN的生长是共形的，轴向和径向生长成分导致具有清晰六边形小面的核-壳结构。通过使用扫描电子显微镜和扫描透射电子显微镜进行的空间分辨阴极发光来确认径向InGaN的生长（壳）。通过生长温度和Ⅲ/Ⅴ比来控制InGaN壳的In含量。

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来源
《Journal of Crystal Growth》 |2014年第15期|5-10|共6页
作者
S. Albert; A. Bengoechea-Encabo; M. Sabido-Siller; M. Mueller; G. Schmidt; S. Metzner; P. Veit; F. Bertram; M.A. Sanchez-Garcia; J. Christen; E. Calleja;
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作者单位

ISOM and Electronic Engineering Department, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain;

ISOM and Electronic Engineering Department, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain;

ISOM and Electronic Engineering Department, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain;

Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany;

Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany;

Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany;

Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany;

Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany;

ISOM and Electronic Engineering Department, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain;

Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany;

ISOM and Electronic Engineering Department, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting Ⅲ/Ⅴ materials;

机译：A1。蚀刻;A1。纳米结构;A3。分子束外延;A3。选择性外延;B1。氮化物;B2。半导体Ⅲ/Ⅴ类材料;

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1. Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays [J] . Le Boulbar, E.D., Girgel, Journal of Applied Physics . 2013,第9期

机译：在蚀刻的GaN纳米棒阵列上通过金属有机气相外延生长的GaN / InGaN / GaN核-壳结构的刻面恢复和发光
2. Ti-mask Selective-area Growth Of Gan By Rf-plasma-assisted Molecular-beam Epitaxy For Fabricating Regularly Arranged Ingan/gan Nanocolumns [J] . Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi Applied physics express . 2008,第12期

机译：利用Rf等离子体辅助分子束外延法制备Gan的Ti掩模选择性区域，以制备规则排列的Ingan / gan纳米柱。
3. Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy [J] . Albert Steven, Bengoechea-Encabo Ana, Kong Xiang, Crystal growth & design . 2015,第6期

机译：分子束外延选择性生长的纳米柱状InGaN / GaN异质结构的生长条件，形貌和光学性质之间的相关性
4. Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy [C] . M.A.L.Johnson, Zhonghai Yu, C.Boney, International symposium on compound semiconductors . 1997

机译：通过分子束外延的GaN，Ingan和AlGaN薄膜的生长和量子阱结构
5. Structure, morphology, and kinetics of GaN film growth using gas-source and RF plasma-assisted metal-organic molecular beam epitaxy [D] . Woll, Arthur Randall 2000

机译：使用气体源和RF等离子体辅助金属 - 有机分子束外延对GaN薄膜生长的结构，形态和动力学
6. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy [O] . Yongjin Wang, Fangren Hu, Kazuhiro Hane 2011

机译：分子束外延在独立式GaN光栅上InGaN / GaN量子阱的图案生长
7. Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays [O] . Le Boulbar E. D., Girgel Ionut, Lewins C. J., 2013

机译：在蚀刻的GaN纳米棒阵列上通过金属有机气相外延生长的GaN / InGaN / GaN核-壳结构的刻面恢复和发光

Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy

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