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首页> 外文期刊>Journal of Crystal Growth >Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films
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Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films

机译：3C-SiC / Si（111）模板性能对厚GaN膜中应变弛豫的影响

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摘要

In this work, we study the influence of 3C-SiC/Si (111) template parameters (thickness, roughness and substrate miscut) on the GaN crystal quality and its strain state. For this, structures with an AlN nucleation layer and 1-4 μm thick GaN layer have been grown by molecular beam epitaxy in order to select the best templates for the growth of thick GaN structures. Similar GaN structures have been grown directly on silicon for comparisons. The influence of the high silicon doping is confirmed on the enhancement of strain relaxation. Despite this limitation, a 5 μm thick crack-free continuous GaN structure (with 1 μm silicon doped) has been successfully grown on the best selected template. Furthermore, the growth by metal-organic chemical vapor deposition of structures with AlN and SiN inter-layers and thick continuous GaN layers on Si (111), 3C-SiC/Si (111) and SoPSiC (silicon on polycrystalline silicon carbide) has been achieved in order to show the relative benefit of each approach in terms of layer quality and strain state.
机译：在这项工作中，我们研究了3C-SiC / Si（111）模板参数（厚度，粗糙度和衬底切割不良）对GaN晶体质量及其应变状态的影响。为此，已经通过分子束外延生长了具有AlN成核层和1-4μm厚的GaN层的结构，以便选择用于生长厚的GaN结构的最佳模板。为了比较，已经在硅上直接生长了类似的GaN结构。证实了高硅掺杂对应变松弛增强的影响。尽管有此限制，但已在最佳选择的模板上成功生长了5μm厚的无裂纹连续GaN结构（掺杂了1μm硅）。此外，通过金属有机化学气相沉积生长具有Si（111），3C-SiC / Si（111）和SoPSiC（多晶硅在碳化硅上的硅）上具有AlN和SiN中间层以及厚连续GaN层的结构为了显示每种方法在层质量和应变状态方面的相对优势，已取得了成功。

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  • 来源
    《Journal of Crystal Growth》 |2014年第15期|23-32|共10页
  • 作者

    Yvon Cordier; Eric Frayssinet; Marc Portail; Marcin Zielinski; Thierry Chassagne; Maxim Korytov; Aimeric Courville; Sebastien Roy; Maud Nemoz; Magdalena Chmielowska; Philippe Vennegues; H.P. David Schenk; Mark Kennard; Alexis Bavard; Daniel Rondi;

  • 作者单位

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    NOVASiC, Savoie Technolac, Arche Bat. 4, BP 267, 73375 Le Bourget du Lac Cedex, France;

    NOVASiC, Savoie Technolac, Arche Bat. 4, BP 267, 73375 Le Bourget du Lac Cedex, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

    SOITEC Specialty Electronics, Place Marcel Rebuffat, Z.A. Courtaboeuf 7, 91140 Villejust, France;

    SOITEC Specialty Electronics, Place Marcel Rebuffat, Z.A. Courtaboeuf 7, 91140 Villejust, France;

    OMMIC, 2 chemin du Moulin, B.P. 11, 94453 Limeil-Brevannes Cedex, France;

    OMMIC, 2 chemin du Moulin, B.P. 11, 94453 Limeil-Brevannes Cedex, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Molecular beam epitaxy; A2. Metal-organic vapor phase epitaxy; B1. GaN on silicon; B2. Cubic silicon carbide;

    机译：A1。分子束外延;A2。金属有机气相外延;B1。硅上的GaN;B2。立方碳化硅;

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