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首页> 外文期刊>Journal of Crystal Growth >Growth of ZnTe single crystals from Te solution by vertical Bridgman method with ACRT
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Growth of ZnTe single crystals from Te solution by vertical Bridgman method with ACRT

机译：垂直布里奇曼法和ACRT法从Te溶液中生长ZnTe单晶

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摘要

ZnTe ingots 30 mm in diameter and about 60 mm in length were grown from Te solution based on vertical Bridgman method with accelerated crucible rotation technique (ACRT). The composition homogeneity and the optical and electrical properties of the crystals were investigated using optical transmission microscope, energy dispersive spectrometer (EDS), scanning electron microscope (SEM), electron probe micro-analyzer (EPMA), ultraviolet-visible (UV-Vis) spectrophotometer, Fourier transform infrared (FT-IR) spectrometer and digital electrometer. The growth method was found efficient for mass transfer, and produced large size single crystal with the volume up to 10 mm × 10 mm × 40 mm. Single crystals formed in the earlier stage of growth process are larger in size with less Te inclusions. Secondary inclusions formed due to thermal migration and crystal cracking were found. The IR transmittance over the wavenumber range from 500 to 4000 cm~(-1) is about 60%, and the band gap is about 2.23 eV at room temperature (RT). Its resistivity can reach up to about 700 Ω cm, which is the highest ever reported for unintentionally doped ZnTe crystal.
机译：基于垂直Bridgman方法和加速坩埚旋转技术（ACRT），从Te溶液中生长直径30 mm，长度约60 mm的ZnTe锭。使用光学透射显微镜，能量色散光谱仪（EDS），扫描电子显微镜（SEM），电子探针显微分析仪（EPMA），紫外可见光（UV-Vis）研究了晶体的组成均匀性以及光学和电学性质分光光度计，傅立叶变换红外（FT-IR）光谱仪和数字静电计。发现该生长方法对于传质有效，并且产生了体积最大为10mm×10mm×40mm的大尺寸单晶。在生长过程的早期阶段形成的单晶尺寸较大，而Te夹杂物较少。发现由于热迁移和晶体破裂而形成的次生夹杂物。在室温（RT）下，波数范围为500至4000 cm〜（-1）的IR透射率约为60％，带隙约为2.23 eV。它的电阻率可以达到约700Ωcm，这是有意掺杂的ZnTe晶体的最高报道值。

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