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Calculations of parameters of RHEED oscillations using different models of the scattering potential

机译:使用不同的散射势模型计算RHEED振荡的参数

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RHEED intensities for flat and rough surfaces of Ge are computed for off-symmetry azimuths within the framework of dynamical diffraction theory. Two substantially different models of the scattering potential are used. Calculations employing the realistic model are compared with calculations for the simple potential model. The realistic potential is defined with the help of sum of Gaussian functions determined for each atomic layer. On the other hand, in the simple model only two, volume-averaged constants are taken into account to describe the potential (one value is set for the bulk, the other for the growing layer). It is discussed that simplified approaches may be indeed helpful for describing basic features of RHEED oscillations. However, obtaining precise information on growing samples requires the use of realistic approaches.
机译:在动态衍射理论的框架内,针对非对称方位角计算了Ge的平坦和粗糙表面的RHEED强度。使用两种基本不同的散射势模型。将采用现实模型的计算与针对简单势能模型的计算进行比较。借助于为每个原子层确定的高斯函数之和定义了实际势。另一方面,在简单模型中,仅考虑两个体积平均常数来描述电位(一个值设置为块,另一个值设置为生长层)。讨论了简化方法可能确实有助于描述RHEED振荡的基本特征。但是,要获得有关生长样品的精确信息,就需要使用现实的方法。

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