4H-SiC surface structure transitions during crystal growth following bunching in a fast sublimation process

Filip Krzyiewski

首页> 外文期刊>Journal of Crystal Growth >4H-SiC surface structure transitions during crystal growth following bunching in a fast sublimation process

【24h】

4H-SiC surface structure transitions during crystal growth following bunching in a fast sublimation process

机译：在快速升华过程中成束之后，晶体生长过程中4H-SiC表面结构过渡

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Kinetic Monte Carlo wurtzite structure crystals of 4H-SiC simulations were performed. The first stage of system evolution was the sublimation process which ended when bunched structure appeared. Then the crystal growth started. Vanishing of bunched structure and its transition to the double stepped one was observed on setting the proper parameters during growth up. For high incoming fluxes during growth 2D nucleation happened at wide terraces and surface debunching was blocked. Application of low resulting flux of incoming and out-coming particles have also blocked the surface smoothing process.

机译：进行了动力学动力学蒙特卡洛纤锌矿结构晶体的4H-SiC模拟。系统发展的第一阶段是升华过程，当束状结构出现时，升华过程结束。然后晶体开始生长。通过在生长过程中设定适当的参数，可以观察到束状结构的消失以及其向双台阶结构的转变。对于生长过程中的高通量通量，在较宽的阶地发生了2D成核作用，并且表面起泡被阻止。施加低的进，出颗粒通量也阻碍了表面的平滑处理。

著录项

来源
《Journal of Crystal Growth》 |2014年第1期|511-513|共3页
作者
Filip Krzyiewski;
展开▼
作者单位

Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Crystal growth; A1. Kinetic Monte Carlo; A1. Sublimation; A1. Surface structure;

机译：A1。晶体生长;A1。动力学蒙特卡洛;A1。升华;A1。表面结构;

相似文献

外文文献
中文文献
专利

1. Step bunching process induced by the flow of steps at the sublimated crystal surface [J] . Magdalena A. Zatuska-Kotur, Filip Krzyzewski Journal of Applied Physics . 2012,第11期

机译：由升华晶体表面的台阶流引起的台阶聚集过程
2. Crystal structure of the growth surface of silicon carbide obtained by sublimation [J] . G. I. Babayants, V. A. Popenko Crystallography reports . 2007,第2期

机译：通过升华获得的碳化硅生长表面的晶体结构
3. Ultrafast electron crystallography: Transient structures of molecules, surfaces, and phase transitions [J] . Chong-Yu Ruan, Franco Vigliotti, Vladimir A. Lobastov, Proceedings of the National Academy of Sciences of the United States of America . 2004,第5期

机译：超快电子晶体学：分子，表面和相变的瞬态结构
4. Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure [C] . Yamina Andre, Agnes Trassoudaine, Geoffrey Avit, Conference on microano materials, devices, and systems . 2013

机译：氢化物VPE：具有创纪录的长宽比和无多型晶体结构的GaAs和GaN纳米线快速生长的出人意料的过程
5. Plastic deformation of silicon carbide crystals during the sublimation bulk growth process. [D] . Ha, Seoyong. 2002

机译：升华体生长过程中碳化硅晶体的塑性变形。
6. Ultrafast electron crystallography: Transient structures of molecules surfaces and phase transitions [O] . Chong-Yu Ruan, Franco Vigliotti, Vladimir A. Lobastov, 2004

机译：超快电子晶体学：分子表面和相变的瞬态结构
7. Step bunching process induced by the flow of steps at the sublimated crystal surface [O] . Zaluska-Kotur, M. A., Krzyzewski, F., Krukowski, S. 2012

机译：升华后的步骤流引起的步聚束过程水晶表面
8. Relation Between Growth Temperature and the Structure of SiC Crystals Grown by the Sublimation Method [R] . Inomata, Y., Inoue, Z., Mitomo, M., 1969

机译：生长温度与升华法生长siC晶体结构的关系

4H-SiC surface structure transitions during crystal growth following bunching in a fast sublimation process

摘要

著录项

相似文献

相关主题

期刊订阅