Epitaxial growth of corundum-structured wide band gap Ⅲ-oxide semiconductor thin films

Shizuo Fujita; Kentaro Kaneko

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Epitaxial growth of corundum-structured wide band gap Ⅲ-oxide semiconductor thin films

机译：刚玉结构宽带隙Ⅲ型氧化物半导体薄膜的外延生长

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摘要

We report fundamental issues and prospects of the rhombohedral corundum-structured Ⅲ-oxide (Ⅲ-O) alloy system constituted with α-M_2O_3 (M=metal element) materials. Successful epitaxial growth of α-Ga_2O_3 and α-In_2O_3 on sapphire (α-Al_2O_3) substrates has enabled the growth of α-(Al,Ga,In)_2O_3 semiconductor alloys, achieving the "band gap engineering" from 3.8 eV (an experimental value) to 8.8 eV. Transition-metal corundum-structured oxides (M=Cr, Fe, V, Ti) can be alloyed with the α-(Al,Ga, In)_2O_3 semiconductor alloys, leading to "function engineering", that is, to tailor the materials functions. The corundum-structured Ⅲ-O alloys will contribute to novel multifunctional devices in the future.

机译：我们报告了由α-M_2O_3（M =金属元素）材料构成的菱形刚玉结构的Ⅲ-氧化物（Ⅲ-O）合金体系的基本问题和前景。在蓝宝石（α-Al_2O_3）衬底上成功外延生长α-Ga_2O_3和α-In_2O_3使得α-（Al，Ga，In）_2O_3半导体合金得以生长，实现了3.8 eV的“带隙工程”（实验值）至8.8 eV。过渡金属刚玉结构的氧化物（M = Cr，Fe，V，Ti）可以与α-（Al，Ga，In）_2O_3半导体合金形成合金，从而导致“功能工程”，即定制材料功能。刚玉结构的Ⅲ-O合金将在未来为新型多功能器件做出贡献。

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来源
《Journal of Crystal Growth》 |2014年第1期|588-592|共5页
作者
Shizuo Fujita; Kentaro Kaneko;
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作者单位

Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Kyoto 615-8520, Japan;

Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Kyoto 615-8520, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Crystal structure; A3. Chemical vapor deposition processes; B1. Oxides; B2. Semiconducting ternary compounds;

机译：A1。晶体结构A3。化学气相沉积工艺;B1。氧化物;B2。半导体三元化合物;

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Epitaxial growth of corundum-structured wide band gap Ⅲ-oxide semiconductor thin films

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