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Doping effects in InN/GaN short-period quantum well structures-Theoretical studies based on density functional methods

机译:InN / GaN短周期量子阱结构中的掺杂效应-基于密度泛函方法的理论研究

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摘要

Density functional theory studies were conducted to determine an influence of the carrier concentration on the optical and electronic properties of InN/GaN superlattice system. The oscillator strength values, energy gaps and the band profiles were obtained. The band profiles were found to be strongly affected for technically possible heavy n-type doping while for p-type doping the carrier influence, both screening and band shift, is negligible. Blue shift of the transition energy between conduction band minima and valence band maxima was observed for high concentrations of both type carriers.
机译:进行密度泛函理论研究,以确定载流子浓度对InN / GaN超晶格系统的光学和电子性能的影响。获得了振荡器的强度值,能隙和能带分布。对于技术上可能的重n型掺杂,发现能带分布受到严重影响,而对于p型掺杂,载流子的影响(屏蔽和带移)均可以忽略不计。对于两种类型载流子的高浓度,都观察到导带最小值和价带最大值之间的跃迁能量的蓝移。

著录项

  • 来源
    《Journal of Crystal Growth》 |2014年第1期|652-656|共5页
  • 作者单位

    Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Absorption; A3.Quantum well; A3. Superlattice; B1. Nitride;

    机译:A1。吸收A3。量子阱;A3。超晶格B1。氮化物;

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