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首页> 外文期刊>Journal of Crystal Growth >Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions
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Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

机译：在不同温度梯度条件下，由Si-Cr-C和Si-Cr-Al-C溶液生长的4H-SiC晶体的生长速率和表面形态

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摘要

The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si_(1-x)Cr_x and Si_(1-x-y)Cr_xAl_y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si_(1-x-y)Cr_xAl_y solvents even under highly supersaturated conditions where the growth rate exceeded 760 um/h. Conversely, trench-like defects were observed in crystals grown with Si_(1-x)Cr_x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macro-step height in crystals grown with Si_(1-x-y)Cr_xAl_y solvents was maintained at lower levels than that obtained using Si_(1-x)Cr_x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.
机译：研究了在不同温度下用Si_（1-x）Cr_x和Si_（1-xy）Cr_xAl_y（x = 0.4、0.5和0.6; y = 0.04）溶液溶液生长制备的4H-SiC晶体的生长速率和表面形态。条件。检查生长速率与生长表面和碳源之间的温差，过饱和碳的量和生长表面上的过饱和的关系。我们发现，即使在生长速度超过760 um / h的高度过饱和条件下，使用Si_（1-x-y）Cr_xAl_y溶剂也能抑制4H-SiC晶体中沟槽状表面缺陷的产生。相反，在所有实验条件下，在用Si_（1-x）Cr_x溶剂生长的晶体中观察到沟槽状缺陷。对宏观台阶结构的统计观察表明，与使用Si_（1-x）Cr_x溶剂获得的晶体相比，使用Si_（1-x-y）Cr_xAl_y溶剂生长的晶体的宏观台阶高度保持较低的水平。 Al的添加防止宏观台阶发展成大台阶，大台阶导致沟槽状表面缺陷的产生。

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  • 来源
    《Journal of Crystal Growth》 |2014年第1期|681-685|共5页
  • 作者

    Takeshi Mitani; Naoyoshi Komatsu; Tetsuo Takahashi; Tomohisa Kato; Kuniharu Fujii; Toru Ujihara; Yuji Matsumoto; Kazuhisa Kurashige; Hajime Okumura;

  • 作者单位

    R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., Tsukuba, lbaraki 300-4247, Japan;

    Department of Crystalline Materials Science, Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan;

    Department of Applied Chemistry, Tohoku University, Aoba, Sendai, Miyagi 980-8579, Japan;

    R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., Tsukuba, lbaraki 300-4247, Japan;

    R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Roughening; A1. Surface structure; A2. Growth from solution; A2. Top seeded solution growth; B1. Silicon carbide;

    机译：A1。粗化;A1。表面结构;A2。从解决方案中成长;A2。最佳种子溶液生长;B1。碳化硅;

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