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首页> 外文期刊>Journal of Crystal Growth >Improvement of multi-crystalline silicon ingot growth by using diffusion barriers
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Improvement of multi-crystalline silicon ingot growth by using diffusion barriers

机译：通过使用扩散势垒改善多晶硅锭的生长

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摘要

The control of impurity is crucial to the ingot quality and yield in the directional solidification of multi-crystalline silicon for solar cells. The major impurities, such as metals, are mainly from the quartz crucible and the silicon nitride coating. The use of high-purity materials mitigates the problem, but it also increases the cost. Another way is to use diffusion barriers between silicon and these materials to reduce the incorporation of impurities. In this study, polysilazane and barium oxide coatings with different layer configurations were considered. With the diffusion barrier layer, the lifetime of the ingot was improved and the red zone was reduced. The wetting behaviors of these diffusion barriers in contact with silicon were also discussed.
机译：在太阳能电池用多晶硅的定向凝固中，杂质的控制对于铸锭质量和产量至关重要。主要杂质（例如金属）主要来自石英坩埚和氮化硅涂层。高纯度材料的使用减轻了该问题，但同时也增加了成本。另一种方法是在硅和这些材料之间使用扩散势垒，以减少杂质的掺入。在这项研究中，考虑了具有不同层配置的聚硅氮烷和氧化钡涂层。利用扩散阻挡层，改善了铸锭的寿命并且减少了红色区域。还讨论了这些扩散势垒与硅接触时的润湿行为。

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  • 来源
    《Journal of Crystal Growth》 |2014年第1期|727-731|共5页
  • 作者

    C.C. Hsieh; A. Lan; C. Hsu; C.W. Lan;

  • 作者单位

    Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC;

    Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC,Sino-American Silicon Productions Inc., Hsin-chu, Taiwan, ROC;

    Sino-American Silicon Productions Inc., Hsin-chu, Taiwan, ROC;

    Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Impurity; A1. Directional solidification; B2. Silicon; B3. Solar cells;

    机译：A1。不纯;A1。定向凝固;B2。硅;B3。太阳能电池;

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