Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field

著录项

• 来源
  《Journal of Crystal Growth》 |2014年第1期|888-894|共7页
• 作者

  J.-C. Chen; P.-C. Guo; C-H. Chang; Y.-Y. Teng; C Hsu; H.-M. Wang; C.-C. Liu;

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• 作者单位

  Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan, ROC;

  Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan, ROC;

  Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan, ROC;

  Chung Shan Institute of Science and Technology (CSIST), Taiwan, ROC;

  Sino-American Silicon Products Inc., Taiwan, ROC;

  Sino-American Silicon Products Inc., Taiwan, ROC;

  Sino-American Silicon Products Inc., Taiwan, ROC;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Single crystal growth; A1. Fluid flows; A1. Computer simulation; A2. Magnetic field assisted Czochralski method; A1. Heat transfer; A1. Impurities;

  机译：A1。单晶生长;A1。流体流动;A1。计算机仿真;A2。磁场辅助切克劳斯基方法;A1。传播热量;A1。杂质;