Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers

著录项

• 来源
  《Journal of Crystal Growth》 |2013年第1期|197-199|共3页
• 作者

  Kazuo Uchida; Heisuke Kanaya; Hiroshi Imanishi; Atushi Koizumi; Shinji Nozaki;

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• 作者单位

  Department of Engineering Science, Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka,Chofil, Tokyo 182-8585, Japan;

  Department of Engineering Science, Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka,Chofil, Tokyo 182-8585, Japan;

  Department of Engineering Science, Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka,Chofil, Tokyo 182-8585, Japan;

  Department of Engineering Science, Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka,Chofil, Tokyo 182-8585, Japan;

  Department of Engineering Science, Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka,Chofil, Tokyo 182-8585, Japan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. characterization; A1. interfaces; A3. low press. metalorganic vapor phase epitaxy; B1. semiconductingⅢ—Ⅴ materials; B3. bipolar transistor;

  机译：A1。表征;A1。接口;A3。低压力。金属有机气相外延;B1。半导体Ⅲ—Ⅴ材料;B3。双极晶体管;