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首页> 外文期刊>Journal of Crystal Growth >The effects of surface treatments of the substrates on high-quality GaN crystal growth
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The effects of surface treatments of the substrates on high-quality GaN crystal growth

机译：衬底表面处理对高质量GaN晶体生长的影响

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摘要

To study the effects of the surface treatments of c-plane GaN substrates on epitaxial growth, surfaces of c-plane GaN freestanding substrates grown by the Na flux method were treated in different ways: mechanical polishing (MP); chemical mechanical polishing after MP; or wet etching (WE) with the use of pyrophosphoric acid after MP. After each surface treatment, we grew Ga-face GaN substrates. Consequently, we concluded that the surface treatment by WE was one of the effective and easy ways to make a Ga-face GaN suitable for growth. Using the WE treatment, we successfully reduced the dislocation density of Ga-face GaN crystal from 2.4 × 10~7 cm~(-2) to 3.9 × 10~3 cm~(-2), after two times repeated growth.
机译：为了研究c平面GaN衬底的表面处理对外延生长的影响，采用Na助熔剂法生长的c平面GaN自支撑衬底的表面采用不同的方法进行处理：机械抛光（MP）; MP后的化学机械抛光；或在MP之后使用焦磷酸湿法蚀刻（WE）。每次表面处理后，我们都生长了Ga-face GaN衬底。因此，我们得出结论，通过WE进行表面处理是使Ga面GaN适于生长的一种有效而简便的方法。经过两次重复生长，通过WE处理，我们成功地将Ga面GaN晶体的位错密度从2.4×10〜7 cm〜（-2）降低到3.9×10〜3 cm〜（-2）。

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  • 来源
    《Journal of Crystal Growth》 |2013年第1期|73-77|共5页
  • 作者

    Taku Fujimori; Mihoko Maruyama; Masatomo Honjo; Hideo Takazawa; Kosuke Murakami; Hiroki Imabayashi; Yuma Todoroki; Daisuke Matsuo; Mamoru Imade; Masashi Yoshimura; Yusuke Mori;

  • 作者单位

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Defects; A1. Substrates; A1. Surface processes; A2. Growth from solution; A3. Liquid phase epitaxy; B1. Nitrides;

    机译：A1。缺陷;A1。基材;A1。表面工艺;A2。从解决方案中成长;A3。液相外延;B1。氮化物;

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