Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

Kazuhiro Gotoh; Ryuji Oshima; Takeyoshi Sugaya; Isao Sakata; Koji Matsubara; MichioKondo

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Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

机译：固体源分子束外延生长Si（001）衬底上高度均匀的Ge量子点的光学和结构研究

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We have studied Ge self-assembled quantum dots (QDs) grown by molecular beam epitaxy on Si (001) substrates. We investigated the effect of a pulse growth technique, which involves the combination of a high deposition rate of 2.8 A/s and a 5-s growth interruption (GI) time, on the properties of 20-layer stacked Ge QDs. We found that both the size and size dispersion of the QDs grown using the pulse growth technique were successfully maintained without generating any dislocations even after 20 layers of stacking. Further, a high sheet density of 6.9 × 10~(10)cm~(-2) and better size dispersion of 12.4% can be achieved. In photoluminescence (PL) measurements, PL emission at 0.833 eV with line width of 71.2 meV was clearly observed at 12 K for 20-layer stacked Ge QDs grown using the pulse growth technique.

机译：我们已经研究了通过分子束外延在Si（001）衬底上生长的Ge自组装量子点（QD）。我们研究了脉冲生长技术对20层堆叠Ge QD的性能的影响，该技术涉及2.8 A / s的高沉积速率和5 s的生长中断（GI）时间。我们发现，即使经过20层堆叠，使用脉冲生长技术生长的QD的尺寸和尺寸色散也可以得到成功保持，而不会产生任何位错。此外，可以实现6.9×10〜（10）cm〜（-2）的高片密度和12.4％的更好的尺寸分散。在光致发光（PL）测量中，对于使用脉冲生长技术生长的20层堆叠式Ge QD，在12 K下可以清楚地观察到线宽为71.2 meV的0.833 eV的PL发射。

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来源
《Journal of Crystal Growth》 |2013年第1期|439-441|共3页
作者
Kazuhiro Gotoh; Ryuji Oshima; Takeyoshi Sugaya; Isao Sakata; Koji Matsubara; MichioKondo;
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作者单位

Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Ngatsuta-cho, Midori-ku, Yokohama 226-8502, Japan;

Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;

Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;

Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;

Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;

Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Ngatsuta-cho, Midori-ku, Yokohama 226-8502, Japan,Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tukuba, Ibaraki 305-8568, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Low-dimensional structure; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting germanium;

机译：A1。低维结构;A3。分子束外延;B1。纳米材料;B2。半导体锗;

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Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

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