Trapezoid defect in 4H-SiC epilayers

R.A. Berechman; S. Chung; G. Chung; E. Sanchez; N.A. Mahadik; R.E. Stahlbush; M. Skowronski

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Trapezoid defect in 4H-SiC epilayers

机译：4H-SiC外延层中的梯形缺陷

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A new type of extended defect was identified in 4H-SiC homoepitaxial epilayers. The defect has a characteristic trapezoidal shape with parallel sides perpendicular to the off-cut direction in ultraviolet photoluminescence intensity maps. Structural characterization of the defect using a transmission electron microscope revealed that the trapezoid defect consisted of multiple Frank type stacking faults. The faults originate in the substrate and propagate into the epilayer during epitaxy.

机译：在4H-SiC同质外延外延层中发现了一种新型的延伸缺陷。缺陷具有特征为梯形的形状，在紫外光致发光强度图中，其平行边垂直于切角方向。使用透射电子显微镜对缺陷进行结构表征表明，梯形缺陷由多个弗兰克型堆垛层错组成。断层起源于基底并在外延期间传播到表层。

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来源
《Journal of Crystal Growth》 |2012年第1期|p.16-19|共4页
作者
R.A. Berechman; S. Chung; G. Chung; E. Sanchez; N.A. Mahadik; R.E. Stahlbush; M. Skowronski;
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作者单位

Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, PA 15213, USA;

Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, PA 15213, USA;

Dow-Coming. 2200 West Salzburg Road, Midland, MI 48686, USA;

Dow-Coming. 2200 West Salzburg Road, Midland, MI 48686, USA;

Naval Research Lab, 4555 Overlook Ave. SW. Washington DC 20375, USA;

Naval Research Lab, 4555 Overlook Ave. SW. Washington DC 20375, USA;

Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, PA 15213, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. Defects; B2. Semiconductor silicon compounds;

机译：A1。缺陷;B2。半导体硅化合物;

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1. Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers [J] . Osamu Ishiyama, Keiichi Yamada, Hideki Sako, Japanese journal of applied physics . 2014,第4S期

机译：4H-SiC外延晶片中梯形缺陷和钝三角形缺陷的栅氧化物可靠性
2. Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers [J] . Cui Yingxin, Li Juntao, Zhou Kun, Diamond and Related Materials . 2019,第期

机译：延长缺陷和椭圆形面对生长4H-SIC脱落剂少数载体寿命分布的影响
3. Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer [J] . Ying-Xi Niu, Xiao-Yan Tang, Ren-Xu Jia, 中国物理快报：英文版 . 2018,第007期

机译：三角形结构缺陷对4H-SiC超厚外延层载流子寿命的影响
4. Investigation on origin of Ru-induced deep-level defects in 4H-SiC epilayer based Schottky diodes by DLTS and theoretical calculations [C] . Joshua W. Kleppinger, Yuriy Pershin, Zsolt Rak, International Conference on Hard X-Ray, Gamma-Ray, and Neutron Detector Physics . 2019

机译：DLTS与理论计算ru-SiC脱晶肖特基二极管ru诱导深层缺陷的起源调查
5. Fabrication and characterization of compact high resolution radiation detectors based on 4h-sic n-type epilayer and cdznte. [D] . Zavalla Mendoza, Kelvin J. 2013

机译：基于4h-sic n型外延层和cdznte的紧凑型高分辨率辐射探测器的制造与表征。
6. Nonlinear optical imaging of defects in cubic silicon carbide epilayers [O] . Radu Hristu, Stefan G. Stanciu, Denis E. Tranca, -1

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7. Structure of Carrot Defects in 4H-SiC Epilayers [O] . X. Zhang, S. Ha, M. Benamara, 2015

机译：4H-siC外延层中胡萝卜缺陷的结构
8. Lifetime-limiting Defects in n(-) 4H-SiC Epilayers. [R] . Klein, P. B., Shanabrook, B. V., Huh, S. W., 2006

机译：n（ - ）4H-siC外延层的寿命限制缺陷。

Trapezoid defect in 4H-SiC epilayers

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