Facilitating growth of InAs-InP core-shell nanowires through the introduction of Al

著录项

• 来源
  《Journal of Crystal Growth》 |2012年第1期|p.11-15|共5页
• 作者

  C.M. Haapamaki; J. Baugh; R.R. LaPierre;

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• 作者单位

  Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario, Canada L8S 4L7;

  Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1,Department of Chemistry, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1;

  Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario, Canada L8S 4L7;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. Molecular beam epitaxy; B2. Semiconducting HI-V materials; B2. Semiconducting aluminium compounds; B2. Semiconducting ternary compounds;

  机译：A3。分子束外延;B2。半导体HI-V材料;B2。半导体铝化合物;B2。半导体三元化合物;