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首页> 外文期刊>Journal of Crystal Growth >Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates
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Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

机译：源气体供应顺序对（0001）蓝宝石衬底上AlN氢化物气相外延的影响

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摘要

AlN layers were grown on (0001) sapphire substrates by hydride vapor phase epitaxy (HVPE) at 1100 ℃ with a source gas supply sequence of (1) NH_3 preflow or (2) AlCl_3 preflow. An Al-polarity AlN layer without inclusion of a N-polarity region was grown when AlCl_3 was preflown to the sapphire surface prior to AlN growth, while N- and Al-polarity regions were both present in the same AlN layer when NH_3 was preflown, since growth was performed on a nitrided sapphire surface. Compared with the AlN layers grown with NH_3 preflow, the Al-polarity AlN layers grown with AlCl_3 preflow had improved crystalline structural quality, a low concentration of oxygen impurity, and a photoabsorption edge energy of 6.08 eV, which is close to an ideal value. Therefore, the source gas supply sequence has a significant influence on the growth of AlN layers on (0001) sapphire substrates. Thus, preflow of AlCl_3 gas to a sapphire surface prior to AlN growth is a key process for high crystalline quality A1N layer growth with uniform Al-polarity on (0001) sapphire substrates by HVPE.
机译：AlN层在1100℃下通过氢化物气相外延（HVPE）在（0001）蓝宝石衬底上生长，原料气供应顺序为（1）NH_3预流或（2）AlCl_3预流。在AlN生长之前将AlCl_3预流到蓝宝石表面时，会生长出不包含N极性区域的Al极性AlN层，而当NH_3预流动时，同一AlN层中会同时存在N和Al极性区域，因为生长是在氮化蓝宝石表面上进行的。与用NH_3预流生长的AlN层相比，用AlCl_3预流生长的Al极性AlN层具有改善的晶体结构质量，低的氧杂质浓度和6.08 eV的光吸收边缘能，接近理想值。因此，原料气体的供给顺序对（0001）蓝宝石基板上的AlN层的生长有重要影响。因此，在AlN生长之前将AlCl_3气体预流到蓝宝石表面是通过HVPE在（0001）蓝宝石衬底上生长具有均匀Al极性的高结晶质量AlN层的关键过程。

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  • 来源
    《Journal of Crystal Growth》 |2012年第2012期|p.197-200|共4页
  • 作者

    Rie Togashi; Toru Nagashima; Manabu Harada; Hisashi Murakami; Yoshinao Kumagai; Hiroyuki Yanagi; Akinori Koukitu;

  • 作者单位

    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan;

    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan,Tsukuba Research Laboratories, Tokuyama Corporation, 40 Wadai, Tsukuba, Ibaraki 300-4247, Japan;

    Tsukuba Research Laboratories, Tokuyama Corporation, 40 Wadai, Tsukuba, Ibaraki 300-4247, Japan;

    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan;

    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan;

    Tsukuba Research Laboratories, Tokuyama Corporation, 40 Wadai, Tsukuba, Ibaraki 300-4247, Japan;

    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Characterization; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds;

    机译：A1。表征;A3。氢化物气相外延;B1。氮化物;B1。蓝宝石;B2。半导体铝化合物;

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