In situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth of low-temperature-GaN buffer layer

著录项

• 来源
  《Journal of Crystal Growth》 |2012年第2012期|1-4|共4页
• 作者

  Daisuke Iida; Mihoko Sowa; Yasunari Kondo; Daiki Tanaka; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki;

  展开▼
• 作者单位

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan,Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Crystal structure; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;

  机译：A1。晶体结构A1。 X射线衍射;A3。金属有机气相外延;B1。氮化物;