Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QP structures

著录项

• 来源
  《Journal of Crystal Growth》 |2011年第1期|p.110-113|共4页
• 作者

  A. Hospodkova; J. Pangrac; J. Oswald; P. Hazdra; K. Kuldova; J. Vyskocil; E. Hulicius;

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• 作者单位

  Institute of Physics of the AS CR, v. v. I, Cukrovarnicka 10, 162 00 Praha 6, Czech Republic;

  Institute of Physics of the AS CR, v. v. I, Cukrovarnicka 10, 162 00 Praha 6, Czech Republic;

  Institute of Physics of the AS CR, v. v. I, Cukrovarnicka 10, 162 00 Praha 6, Czech Republic;

  Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, 166 27 Praha 6, Czech Republic;

  Institute of Physics of the AS CR, v. v. I, Cukrovarnicka 10, 162 00 Praha 6, Czech Republic;

  Institute of Physics of the AS CR, v. v. I, Cukrovarnicka 10, 162 00 Praha 6, Czech Republic;

  Institute of Physics of the AS CR, v. v. I, Cukrovarnicka 10, 162 00 Praha 6, Czech Republic;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Low dimensional structures; A1. Photoluminescence; A1. Electroluminescence; A3. Low-pressure metalorganic vapor phase epitaxy; A3. InAs/GaAs quantum dots; B2. Semiconducting Ⅲ-Ⅴ materials;

  机译：A1。低维结构;A1。光致发光;A1。电致发光;A3。低压金属有机气相外延;A3。 InAs / GaAs量子点;B2。半导体Ⅲ-Ⅴ材料;