Annealing effects on the size,of Si-nanocrystals embedded in bulk SiO

著录项

• 来源
  《Journal of Crystal Growth》 |2011年第1期|p.191-195|共5页
• 作者

  Weiwei Ke; Xue Feng; Yidong Huang;

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• 作者单位

  State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;

  State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;

  State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Nanostructures; A1. X-ray diffraction; B1. Oxides; B2. Semiconducting silicon;

  机译：A1。纳米结构;A1。 X射线衍射;B1。氧化物;B2。半导体硅;