Single crystal growth and surface chemical stability of KPb_2Br_5

著录项

• 来源
  《Journal of Crystal Growth》 |2011年第1期|p.1000-1004|共5页
• 作者

  V.V. Atuchin; LI. Isaenko; V.G. Kesler; A.Yu. Tarasova;

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• 作者单位

  Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia;

  Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 90, 630090, Russia;

  Laboratory of Physical Principles for Integrated Microelectronics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia;

  Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 90, 630090, Russia;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Characterization; A2. Bridgman technique; B1. Bromides;

  机译：A1。表征;A2。布里奇曼技术;B1。溴化物;