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首页> 外文期刊>Journal of Crystal Growth >Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation
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Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation

机译：低能离子辐照下Ge / Si纳米结构的分子束外延生长

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摘要

Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase of Ge nanoislands density and decrease of average island size and size dispersion. The effect is interpreted in terms of ion-beam-induced formation of surface vacancies and bulk interstitial atoms. The vacancies play the role of effective traps for Ge adatoms, while interstitials create the local stretched regions at the surface. Both factors promote nucleation of 3D Ge nanoislands. Molecular dynamics and Monte Carlo simulations of ion impact and 3D-nanoisland growth, respectively, have been carried out. The nanoislands density is found to be 8 times less in phosphorus-doped substrate. This is in agreement with the proposed mechanism of ion-beam action, since impurities are known to serve as effective sinks for bulk interstitials.
机译：开展了低能离子束辅助锗在硅上生长的联合实验和理论研究。脉冲离子束作用导致Ge纳米岛密度增加，平均岛尺寸和尺寸分散度降低。用离子束诱导的表面空位和大量间隙原子的形成来解释这种作用。空位起Ge原子的有效陷阱的作用，而间隙则在表面形成局部拉伸区域。这两个因素都促进了3D Ge纳米岛的成核。分别进行了离子动力学和3D纳米粒子生长的分子动力学和蒙特卡洛模拟。发现磷掺杂基质中的纳米岛密度低8倍。这与所提出的离子束作用机理是一致的，因为已知杂质可以用作大量填隙的有效吸收体。

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  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.244-246|共3页
  • 作者

    Zh.V. Smagina; P.L Novikov; V.A. Zinovyev; V.A. Armbrister; S.A. Teys; A.V. Dvurechenskii;

  • 作者单位

    Institute of Semiconductor Physics, SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk, Russia;

    Institute of Semiconductor Physics, SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk, Russia;

    Institute of Semiconductor Physics, SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk, Russia;

    Institute of Semiconductor Physics, SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk, Russia;

    Institute of Semiconductor Physics, SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk, Russia;

    Institute of Semiconductor Physics, SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk, Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Molecular dynamics simulation; A1. Quantum dots; A3. Molecular-beam epitaxy; A3. Ion-beam irradiation;

    机译：A1。分子动力学模拟;A1。量子点;A3。分子束外延;A3。离子束照射;

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