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首页> 外文期刊>Journal of Crystal Growth >High-quality metamorphic compositionally graded InGaAs buffers
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High-quality metamorphic compositionally graded InGaAs buffers

机译：高质量变质成分分级的InGaAs缓冲液

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摘要

We have investigated the use of a continuous, linear grading scheme for compositionally graded (metamorphic) In_xGa_(1-x)As buffers on GaAs grown using MOCVD, which can be used as virtual substrates for optical emitters operating at wavelengths > 1.2 μm. Graded buffer quality, as quantified by threading dislocation density (TDD) measurements, was investigated for a range of different graded buffer designs and growth parameters. The best graded buffers obtained had TDD < 9.5 × 10~4 cm~(-2), at a final composition of x=0.346. MOCVD reactor configuration was found to play a key role in obtaining the best graded buffers. Photoluminescence (PL) measurements were carried out on doped and undoped quantum-well separate confinement heterostructures (QW-SCH) that were re-grown on these buffers. The results showed that these buffers can serve as high-quality strain-relaxed templates for optoelectronic devices operating in the 1.2-1.5 μm wavelength region, and it is expected that with further refinement, high-quality virtual substrates can be made that will allow operation even beyond 1.6 μm.
机译：我们研究了使用连续线性分级方案对使用MOCVD生长的GaAs上的成分分级（变质）In_xGa_（1-x）As缓冲液的使用，该缓冲液可用作在> 1.2μm波长下工作的光发射器的虚拟基板。对于一系列不同的梯度缓冲液设计和生长参数，对通过缓冲位错密度（TDD）测量量化的梯度缓冲液质量进行了研究。获得的最佳分级缓冲液的TDD <9.5×10〜4 cm〜（-2），最终组成为x = 0.346。发现MOCVD反应器配置在获得最佳分级缓冲液中起关键作用。在掺杂和未掺杂的量子阱分离限制异质结构（QW-SCH）上进行了光致发光（PL）测量，这些结构在这些缓冲液上重新生长。结果表明，这些缓冲液可以用作在1.2-1.5μm波长范围内运行的光电器件的高质量应变松弛模板，并且可以预期，通过进一步完善，可以制造出高质量的虚拟基板，从而可以进行操作。甚至超过1.6μm。

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