...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (111)
【24h】

Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (111)

机译：低温AlN中间层下的第一GaN层的厚度对在Si（111）上生长的GaN层的性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The characteristics of GaN epitaxial layers grown on Si(111) with a low-temperature AlN interlayer have been investigated, when the thickness of the 1st GaN layer is varied. The thickness of the 1st GaN layer reduces the stress sufficiently to avoid crack formations in the GaN layers; further, the existence of an optimal thickness has been shown. Lower thicknesses result in heavy cracking as a result of strong tensile stresses, while higher thicknesses lead to the saturation of crack density. Further, it is confirmed that the formation of a crack or threading dislocation as the dominant factor for relaxing strain is dependent on the thickness of the 1st GaN layer. The 1st GaN layer plays a key role in ensuring that a GaN layer with a low-temperature AlN interlayer has no cracks.
机译：当改变第一GaN层的厚度时，已经研究了在具有低温AlN夹层的Si（111）上生长的GaN外延层的特性。第一GaN层的厚度充分地减小了应力，以避免在GaN层中形成裂纹。此外，已经显示出最佳厚度的存在。较低的厚度会由于强拉应力而导致严重的开裂，而较高的厚度会导致裂纹密度饱和。此外，可以确认，作为缓和应变的主要因素的裂纹或螺纹位错的形成取决于第一GaN层的厚度。第一GaN层在确保具有低温AlN中间层的GaN层不产生裂纹方面起关键作用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号