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首页> 外文期刊>Journal of Crystal Growth >Conventional slow evaporation and Sankaranarayanan-Ramasamy (SR) method grown diglycine zinc chloride (DGZC) single crystal and its comparative study
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Conventional slow evaporation and Sankaranarayanan-Ramasamy (SR) method grown diglycine zinc chloride (DGZC) single crystal and its comparative study

机译:常规慢蒸发和Sankaranarayanan-Ramasamy(SR)法生长的二甘氨酸氯化锌(DGZC)单晶及其比较研究

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摘要

Diglycine zinc chloride, a semi-organic nonlinear optical crystal was grown by conventional slow evaporation and Sankaranarayanan-Ramasamy method. By employing this unidirectional method, diglycine zinc chloride single crystals of diameters 10, 30 and length up to 60 mm were grown. The growth conditions have been optimized. A maximum growth rate of 1.5 mm per day was realized. A comparative damage threshold analysis made on the diglycine zinc chloride crystals by conventional and unidirectional method shows that the crystal grown by Sankaranarayanan-Ramasamy method has higher damage threshold. The conventional and Sankaranarayanan-Ramasamy method grown diglycine zinc chloride crystals were also characterized by chemical etching, UV-vis analysis, dielectric constant, dielectric loss, Vicker's microhardness analysis and the results were compared. The present study indicates that the crystal quality of Sankaranarayanan-Ramasamy method grown diglycine zinc chloride is good compared to conventional slow evaporation method grown crystal.
机译:通过常规的慢速蒸发和Sankaranarayanan-Ramasamy方法生长了半有机非线性光学晶体二甘氨酸氯化锌。通过采用这种单向方法,生长出直径为10、30,长度最大为60mm的二甘氨酸氯化锌单晶。生长条件已经优化。实现了每天1.5毫米的最大增长率。通过常规和单向方法对二甘氨酸氯化锌晶体进行的损伤阈值比较分析表明,用Sankaranarayanan-Ramasamy方法生长的晶体具有较高的损伤阈值。还通过化学刻蚀,UV-vis分析,介电常数,介电损耗,维氏显微硬度分析对常规和Sankaranarayanan-Ramasamy法生长的二甘氨酸氯化锌晶体进行了表征,并对结果进行了比较。本研究表明,与传统的慢蒸发法生长晶体相比,Sankaranarayanan-Ramasamy法生长的二甘氨酸氯化锌的晶体质量良好。

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