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首页> 外文期刊>Journal of Crystal Growth >Impact of the H_2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si
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Impact of the H_2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

机译：H_2退火对Si上厚Ge层的结构和光学性质的影响； Si对Ge的低温表面钝化

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Using a low temperature/high temperature strategy, we have grown thin (0.27 μm) and thick (2.45 μm) Ge layers on Si(001) substrates that we have submitted to various constant temperature (750 ℃) or cyclic (750 ℃/890 ℃) H_2 anneals, the objective being to identify those yielding the smoothest surfaces, the lowest threading dislocations densities (TDDs) and the highest near infra-red optical absorptions. The best trade-off for thin layers was 750 ℃, 60 min H_2 anneals. Using longer duration 750 ℃ anneals and especially 750 ℃/890 ℃ cyclic anneals indeed yielded rougher surfaces and vastly degraded optical absorption (deleterious formation of GeSi alloys). By contrast, short 750 ℃/890 ℃ thermal cyclings yielded the best metrics in thick Ge layers (while being at the same time the best in terms of throughput): root mean square surface roughness around 0.8 nm, TDD around 10~7 cm~(-2), slightly tensily-strained layers (which a plus for optical absorption as the absorption edge is shifted to higher wavelengths), a limited penetration of Si into Ge (and thus absorption coefficients at 1.3 and 1.55 μm almost equal to those of as-grown layers), etc. We have also described the low temperature (450 ℃/525 ℃) process that we have developed to passivate Ge surfaces thanks to SiH_4 prior to gate stack deposition. Si layer thickness should be below 20 A in order to have conformal deposition. A transition of the growth front to 3 dimensions has indeed been evidenced for 20 A and higher.
机译：使用低温/高温策略，我们已经在Si（001）衬底上生长了薄（0.27μm）和厚（2.45μm）的Ge层，我们已经对其进行了各种恒温（750℃）或循环（750℃/ 890）的处理℃）H_2退火，目的是确定产生最光滑表面，最低穿线位错密度（TDD）和最高近红外光吸收率的表面。薄层的最佳折衷方案是750℃，60 min H_2退火。使用较长时间的750℃退火，尤其是750℃/ 890℃的循环退火，确实会产生较粗糙的表面，并且光吸收会大大降低（GeSi合金的形成不良）。相比之下，短的750℃/ 890℃热循环在厚Ge层中获得了最好的指标（同时在通量方面也是最好的）：均方根表面粗糙度约为0.8 nm，TDD约为10〜7 cm〜 （-2）略微拉伸的层（当吸收边缘移至更高波长时，光学吸收为正），Si进入Ge的渗透有限（因此1.3和1.55μm的吸收系数几乎等于我们还介绍了低温工艺（450℃/ 525℃），该工艺是在栅叠层沉积之前通过SiH_4钝化Ge表面而开发的。 Si层厚度应低于20 A，以进行保形沉积。的确已证明，在20 A及更高电流下，生长前沿向3维过渡。

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