Growth and characterizations of nonpolar [11-20] ZnO on[100] (La,Sr)(Al,Ta)O_3 substrate by chemical vapor deposition

Mitch M.C. Chou; Da-Ren Hang; Shih Chuan Wang; Chenlong Chen; Chun-Yu Lee

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Growth and characterizations of nonpolar [11-20] ZnO on[100] (La,Sr)(Al,Ta)O_3 substrate by chemical vapor deposition

机译：化学气相沉积在[100]（La，Sr）（Al，Ta）O_3衬底上生长非极性[11-20] ZnO及其表征

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Nonpolar a-plane ZnO film with [11-20] orientation was grown on a nearly lattice-matched [100] (La_(0.3),Sr_(0.7))(Al_(0.65),Ta_(0.35))O_3 (LSAT) substrate from a simple chemical vapor deposition method. LSAT single crystal was grown by the Czochralski method. The dependence of growth characteristics on the growth temperatures and reactor's pressures was investigated. The surface morphologies of ZnO films were studied by a scanning electron microscope. The sample orientations were identified by X-ray diffraction pattern and transmission electron microscope. Optical properties examined by room temperature photoluminescence spectra exhibit a strong near-band-edge emission peak at 378.6 nm and a negligible green band.

机译：在几乎晶格匹配的[100]（La_（0.3），Sr_（0.7））（Al_（0.65），Ta_（0.35））O_3（LSAT）上生长具有[11-20]取向的非极性a平面ZnO膜。简单的化学气相沉积方法制成的基材。通过Czochralski法生长LSAT单晶。研究了生长特性对生长温度和反应器压力的依赖性。用扫描电子显微镜研究了ZnO薄膜的表面形貌。通过X射线衍射图和透射电子显微镜确定样品的取向。通过室温光致发光光谱检查的光学性质在378.6 nm处显示出很强的近带边缘发射峰，而绿色带可忽略不计。

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来源
《Journal of Crystal Growth》 |2010年第8期|p.1170-1174|共5页
作者
Mitch M.C. Chou; Da-Ren Hang; Shih Chuan Wang; Chenlong Chen; Chun-Yu Lee;
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作者单位

Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC;

rnDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC;

rnDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC;

rnDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC;

rnDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A2. Czochralski method; A3. Chemical vapor deposition processes; B1. Oxides; B2. Semiconducting II-VI materials;

机译：A2。直拉法;A3。化学气相沉积工艺;B1。氧化物;B2。半导体II-VI材料;

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2. Crystal structure and microstructure of epitaxial Pb(Zr,Ti)O_3 films consisting of mixed phases with tetragonal and rhombohedral symmetries grown on (100)_cSrRuO_3//(100)SrTiO_3 substrate by metalorganic chemical vapor deposition [J] . Shintaro Yokoyama, Hitoshi Morioka, Yong Kwan Kim, Journal of Materials Research . 2007,第6期

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4. Microstructure characterization of nonpolar ZnO and Zn_(1-x)Mg_xO epilayers grown on (100) γ-LiAlO_2 by chemical vapor deposition [C] . T.-H. Huang, W.-H. Lin, J.-J. Wu, Symposium on wide bandgap semiconductor materials and devices;Meeting of the Electrochemical Society . 2012

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Growth and characterizations of nonpolar [11-20] ZnO on[100] (La,Sr)(Al,Ta)O_3 substrate by chemical vapor deposition

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