InAs_yP_(1-y) metamorphic buffer layers on InP substrates for mid-IR diode lasers

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第8期|p.1165-1169|共5页
• 作者

  Jeremy Kirch; Toby Garrod; Sangho Kim; Joo H. Park; Jae C. Shin; L.J. Mawst; T.F. Kuech; X. Song; S.E. Babcock; Igor Vurgaftman; Jerry R. Meyer; Tung-Sheng Kuan;

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• 作者单位

  Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA;

  rnDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA;

  rnDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA;

  rnDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA;

  rnDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA;

  rnDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA;

  rnDepartment of Chemical and Biological Engineering, University of Wisconsin-Madison, USA;

  rnDepartment of Mechanical & Aerospace Engineering, West Virginia University, USA;

  rnDepartment of Materials Science and Engineering, University of Wisconsin-Madison, USA;

  rnCode 5613, Naval Research Laboratory;

  rnCode 5613, Naval Research Laboratory;

  rnDepartment of Physics, University at Albany, Suny;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B1. Antimonides; B1. Phosphides; B3. Laser diodes;

  机译：A3。有机金属气相外延;A3。量子阱;B1。锑化物;B1。磷化物;B3。激光二极管;