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GaN-cored heteronanowires sheathed with Pt shells: Preparation and annealing studies

机译:包覆有Pt壳的GaN芯杂纳米线:制备和退火研究

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摘要

We have prepared GaN-core/Pt-shell composite nanowires via a two-step process. With the crystalline Pt shell layer being deposited with a deposition rate of about 4.5 nm/min, it was agglomerated to become cluster-like structures by the subsequent thermal annealing. The shell layers corresponded mainly to a cubic Pt phase regardless of annealing, whereas PtO_x phases were additionally observed. From Gaussian deconvolution studies, the photoluminescence (PL) spectra were divided into three Gaussian functions, which were centered in the ultraviolet (UV), green, and red region, respectively. The overall PL intensity was increased by increasing the annealing temperature. We have discussed the associated PL mechanisms.
机译:我们通过两步法制备了GaN核/ Pt壳复合纳米线。在以约4.5nm / min的沉积速率沉积结晶Pt壳层的情况下,通过随后的热退火将其凝聚成簇状结构。不管退火如何,壳层主要对应于立方Pt相,而另外观察到PtO_x相。根据高斯反卷积研究,光致发光(PL)光谱分为三个高斯函数,分别以紫外线(UV),绿色和红色区域为中心。通过提高退火温度可以提高总PL强度。我们已经讨论了相关的PL机制。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第8期|p.1199-1204|共6页
  • 作者单位

    Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

    rnDivision of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

    rnDivision of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

    rnDivision of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

    rnDivision of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Nanowires; A1. Sputtering; A1. Thermal annealing; B1. GaN; B1. Metals;

    机译:A1。纳米线;A1。溅射;A1。热退火;B1。氮化镓;B1。金属制品;

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