In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第8期|p.1359-1363|共5页
• 作者

  Yuki Terada; Yukihiro Shimogaki; Yoshiaki Nakano; Masakazu Sugiyama;

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• 作者单位

  Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;

  Department of Materials Engineering, School of Engineering, the University of Tokyo;

  Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan Research Center for Advanced Science and Technology, the University of Tokyo;

  Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan Institute of Engineering Innovation, School of Engineering the University of Tokyo;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Adsorption; A1. Desorption; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials;

  机译：A1。吸附;A1。解吸A1。表面工艺;A3。金属有机气相外延;B2。半导体III-V材料;