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首页> 外文期刊>Journal of Crystal Growth >Effect of conductive oxide buffering on structural and nanoscale electrical properties of ultrathin SrTiO_3 films on Pt electrodes
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Effect of conductive oxide buffering on structural and nanoscale electrical properties of ultrathin SrTiO_3 films on Pt electrodes

机译：导电氧化物缓冲对Pt电极上超薄SrTiO_3薄膜的结构和纳米电性能的影响

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摘要

30 nm-thick SrTiO_3 (STO) dielectric thin films were grown on RuO_2 and LaNiO_3 (LNO)-buffered Pt/Ti/SiO_2/Si substrates at 500-700 ℃. STO thin films that were grown on Pt and RuO_2 substrates are randomly oriented over a wide range of deposition temperatures. The use of an LNO buffer in the growth of STO film promotes the appearance of well developed (1 0 0)-crystallographic features. RuO_2 and LNO buffers effectively prevent the outdiffussion of Ti ions into the STO thin films at a high growth temperature. The Sr/Ti composition ratio of the STO films on RuO_2 and LNO at a high growth temperature is close to the stoichiometric value. However, an STO film grown on Pt without the buffer at a high temperature contains excess Ti because of the outdiffusion of Ti ions from the adhesive Ti layer. Both RuO_2 and LNO buffering enhances the dielectric constant of, and reduces the nanostructural leakage current in, STO films that were grown at a high growth temperature of 700 ℃. Moreover, LNO has a similar crystalline structure and chemistry to STO film, and so substantially reduces the nanostructural leakage current of ultrathin STO films by effectively improving the film/electrode interface, the chemical homogeneity of the films, and the surface roughness of the films.
机译：在RuO_2和LaNiO_3（LNO）缓冲的Pt / Ti / SiO_2 / Si衬底上，于500-700℃上生长30 nm厚的SrTiO_3（STO）电介质薄膜。在Pt和RuO_2衬底上生长的STO薄膜在很宽的沉积温度范围内随机取向。在STO膜的生长过程中使用LNO缓冲液可促进发达的（1 0 0）晶体学特征的出现。 RuO_2和LNO缓冲剂可有效防止Ti离子在高生长温度下扩散到STO薄膜中。在较高的生长温度下，RuO_2和LNO上的STO膜的Sr / Ti组成比接近化学计量值。然而，在高温下在没有缓冲剂的情况下在Pt上生长的STO膜含有过量的Ti，这是因为Ti离子从粘合性Ti层中向外扩散。 RuO_2和LNO缓冲都可以提高在700℃的高生长温度下生长的STO薄膜的介电常数，并减少其中的纳米结构漏电流。此外，LNO具有与STO膜相似的晶体结构和化学性质，因此可通过有效地改善膜/电极界面，膜的化学均质性和膜的表面粗糙度，大大降低超薄STO膜的纳米结构漏电流。

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