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机译:SrTiO_3 / TiO_2缓冲层对在GaN上生长的BiFeO_3薄膜的结构和电性能的影响(0002)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;
机译:TiO_2缓冲层厚度对在GaN上生长的SrTiO_3(111)外延膜的影响(0002)
机译:在Sr_xCa_(1-x)RuO_3缓冲SrTiO_3衬底上生长的BiFeO_3薄膜的电和压电特性
机译:使用双SrTiO_3 / TiO_2缓冲层在c-蓝宝石衬底上制备的BiFeO_3的结构和电性能
机译:使用双SrTiO_3 / TiO_2缓冲层在c-蓝宝石衬底上制备的BiFeO_3的结构和电性能
机译:通过异质外延GaN薄膜中的缓冲层控制应力和缺陷
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:中温缓冲层上高质量MBE生长的GaN薄膜的电性能