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首页> 外文期刊>Journal of Applied Physics >Effects of SrTiO_3/TiO_2 buffer layer on structural and electrical properties of BiFeO_3 thin films grown on GaN (0002)
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Effects of SrTiO_3/TiO_2 buffer layer on structural and electrical properties of BiFeO_3 thin films grown on GaN (0002)

机译:SrTiO_3 / TiO_2缓冲层对在GaN上生长的BiFeO_3薄膜的结构和电性能的影响(0002)

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摘要

BiFeO_3(BFO) films were deposited by pulsed laser deposition on GaN(0002)/c-sapphire. X-ray diffraction data show that BFO(111) epitaxial films was deposited on SrTiO_3/TiO_2 double-layer buffered GaN, compared to the polycrystalline film grown directly on GaN. The epitaxial relationships of BFO film with SrTiO_3/TiO_2 buffer layers were BFO [11-2](111)//GaN [1-100](0002) as revealed by XRD phi scans. Furthermore, BFO films on SrTiO_3/TiO_2 buffer exhibited enhanced electric properties compared to these deposited directly on GaN. The remnant polarization was improved about 30% while the leakage current was reduced by nearly three orders of magnitude. The epitaxial growth promoted by the SrTiO_3/TiO_2 buffer layer is a pivotal parameter in the improved electric properties of BFO films on GaN (0002). Institute of Physics.
机译:BiFeO_3(BFO)薄膜通过脉冲激光沉积法沉积在GaN(0002)/ c-蓝宝石上。 X射线衍射数据表明,与直接在GaN上生长的多晶膜相比,BFO(111)外延膜沉积在SrTiO_3 / TiO_2双层缓冲GaN上。 XRD phi扫描显示,具有SrTiO_3 / TiO_2缓冲层的BFO膜的外延关系为BFO [11-2](111)// GaN [1-100](0002)。此外,与直接沉积在GaN上的BFO膜相比,SrTiO_3 / TiO_2缓冲层上的BFO膜表现出增强的电性能。剩余极化提高了约30%,而泄漏电流降低了近三个数量级。 SrTiO_3 / TiO_2缓冲层促进的外延生长是改善GaN(0002)上BFO薄膜电性能的关键参数。物理研究所。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.717-721|共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China;

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  • 正文语种 eng
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