GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER

• 1. 生长在蓝宝石衬底上的高均匀性GaN薄膜及其制备方法和应用 [P] . 中国专利： CN103996614B . 2016.09.07
• 2. 一种生长在蓝宝石衬底上的InGaN/GaN多量子阱结构 [P] . 中国专利： CN204257685U . 2015-04-08
• 3. Growth of GaN on sapphire with MSE grown buffer layer [P] . 美国专利： US6291318B1 . 2001-09-18

  机译： 使用MSE生长的缓冲层在蓝宝石上生长GaN

• 4. GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER [P] . CA2284475A1 . 2001-04-04

  机译： 带有MSE的BUFFER层的GAN在蓝宝石上的生长

• 5. InGaN/A1GaN/GaN Multilayer Buffer for Growth of GaN on Sapphire [P] . 美国专利： US2002175337A1 . 2002-11-28

  机译： 用于在蓝宝石上生长GaN的InGaN / AlGaN / GaN多层缓冲液

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