Growth of GaN on sapphire with MSE grown buffer layer

• 1. 一种以蓝宝石衬底为基板的GaN基LED多阶缓冲层生长方法 [P] . 中国专利： CN103811601B . 2016.08.17
• 2. 一种以蓝宝石衬底为基板的GaN基LED多阶缓冲层生长方法 [P] . 中国专利： CN103811601A . 2014-05-21
• 3. GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER [P] . CA2284475C . 2008-09-09

  机译： 带有MSE增长缓冲区的蓝宝石上GAN的生长

• 4. GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER [P] . CA2284475A1 . 2001-04-04

  机译： 带有MSE的BUFFER层的GAN在蓝宝石上的生长

• 5. InGaN/A1GaN/GaN Multilayer Buffer for Growth of GaN on Sapphire [P] . 美国专利： US2002175337A1 . 2002-11-28

  机译： 用于在蓝宝石上生长GaN的InGaN / AlGaN / GaN多层缓冲液

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