GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER

• 1. 一种新型蓝宝石上生长GaN外延层方法及GaN外延层 [P] . 中国专利： CN111081834B . 2021.04.23
• 2. 一种新型蓝宝石上生长GaN外延层方法及GaN外延层 [P] . 中国专利： CN111081834A . 2020-04-28
• 3. GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER [P] . CA2284475C . 2008-09-09

  机译： 带有MSE增长缓冲区的蓝宝石上GAN的生长

• 4. Growth of GaN on sapphire with MSE grown buffer layer [P] . 美国专利： US6291318B1 . 2001-09-18

  机译： 使用MSE生长的缓冲层在蓝宝石上生长GaN

• 5. InGaN/A1GaN/GaN Multilayer Buffer for Growth of GaN on Sapphire [P] . 美国专利： US2002175337A1 . 2002-11-28

  机译： 用于在蓝宝石上生长GaN的InGaN / AlGaN / GaN多层缓冲液

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